Title:
窒化アルミニウムウェハの製造方法およびその窒化アルミニウムウェハ
Document Type and Number:
Japanese Patent JP7335617
Kind Code:
B2
Abstract:
The present invention provides an aluminum nitride wafer and a method for making the same. The method includes forming at least one alignment notch in or at least one flat alignment edge on a periphery of the aluminum nitride wafer. The alignment notch and the flat alignment edge can prevent the aluminum nitride wafer from being in a poor state during the semiconductor manufacturing process and makes it possible to position the aluminum nitride wafer precisely so that the fraction defective can be lowered. The aluminum nitride wafer of the present invention has advantages of effective insulation, efficient heat dissipation, and a high dielectric constant, and can be used in semiconductor manufacturing processes, electronic products, and semiconductor equipment.
Inventors:
Sohiko Kai
Ekashiwa
Ekashiwa
Application Number:
JP2020118296A
Publication Date:
August 30, 2023
Filing Date:
July 09, 2020
Export Citation:
Assignee:
HONG CHUANG APPLIED TECHNOLOGY CO.,LTD
International Classes:
C04B35/581; B24B1/00; B24B7/22; B24B9/00; B24B27/06; C01B21/072
Domestic Patent References:
| JP8078581A | ||||
| JP2013535389A | ||||
| JP2007031229A | ||||
| JP2019195036A | ||||
| JP2009023908A | ||||
| JP2003183077A | ||||
| JP2018048033A | ||||
| JP2016215339A | ||||
| JP2005007518A | ||||
| JP20191684A | ||||
| JP2014117782A | ||||
| JP1129880A | ||||
| JP8339947A |
Foreign References:
| WO2015029951A1 | ||||
| WO2019189377A1 |
Attorney, Agent or Firm:
Mitsuhiro Kato