PURPOSE: To obtain a plasma processing device and a method with which the defect generating on the surface of a substrate by the irradiation of ions is limited to the uppermost surface, and the expansion of the defect to the inside of the substrate is prevented by the plasma processing technique with which the surface of a semiconductor substrate is processed.
CONSTITUTION: In the plasma processing device in which an ion stream 12 is taken out from the plasma 5 which is grown in a plasma chamber 2 by applying voltage to a grid electrode and the ion stream is made to irradiate on a substrate 9, the grid electrode is formed in multilayers 6-1 and 6-2, the position of the fine hole, provided on the electrode, is shifted, a plasma light 11 is blocked, but the ion stream 12 is led to an etching chamber 7 by the voltage to be applied to the grid electrodes 6-1 and 6-2, and it is used for processing of the surface of the substrate 9.
WADA KAZUMI
YAMADA KOJI
Next Patent: ASHING DEVICE