Title:
ガリウム含有窒化物バルク単結晶の製造方法
Document Type and Number:
Japanese Patent JP4663319
Kind Code:
B2
Abstract:
The invention relates to new improvements in a process for crystal growth in the environment of supercritical ammonia-containing solution, which are based on use of specific azide mineralizers and result in the improved bulk Group XIII element nitride monocrystals, in particular balk monocrystalline gallium-containing nitride, intended mainly for variety of nitride-based semiconductor products such as various opto-electronic devices. The invention further relates to a mineralizer used for supercritical ammonia-containing solution which comprises at least one compound selected from the group consisting of LiN3, NaN3, KN3, and CsN3.
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Inventors:
Robert Deviliniski
Roman Drazinski
Jesi Garcinski
Leshek-Pesh-Szeptowski
Yasuo Kambara
Roman Drazinski
Jesi Garcinski
Leshek-Pesh-Szeptowski
Yasuo Kambara
Application Number:
JP2004517422A
Publication Date:
April 06, 2011
Filing Date:
April 17, 2003
Export Citation:
Assignee:
AMMONO Sp.zo.o.
International Classes:
B01D9/02; C30B29/38; B01J3/00; C30B7/10; C30B9/00; H01S5/323
Domestic Patent References:
| JP4116535B2 | ||||
| JP2002134416A | ||||
| JP2002053399A | ||||
| JP11189498A |
Foreign References:
| WO2001024921A1 | ||||
| FR2796657A1 |
Attorney, Agent or Firm:
Samejima Mutsumi
Kyousei Tamura
Hisao Ishii
Keiichi
Norihito Yamao
Kyousei Tamura
Hisao Ishii
Keiichi
Norihito Yamao