To provide a method for producing a sputtering target where, in a sputtering film deposition stage using an Nb sputtering target, the frequency in the generation of abnormal discharge causing the trouble in a device, the defect in a product or the like can be reduced.
The method for producing a sputtering target composed of an Nb material is provided with: a stage where an Nb ingot is subjected to squeeze forging and upset forging; a stage where the Nb material subjected to the forging stage is subjected to rolling treatment; a stage where the Nb material subjected to the rolling stage is subjected to heat treatment; and a stage where the Nb material subjected to the heat treatment stage is worked, so as to produce a sputtering target composed of the Nb material.
SUZUKI YUKINOBU
ISHIGAMI TAKASHI
WATANABE TAKASHI
FUJIOKA NAOMI
KOSAKA YASUO
KOMATSU TORU
