Title:
バイア形成工程において発生するエッチング残渣を除去する方法
Document Type and Number:
Japanese Patent JP2004517470
Kind Code:
A
Abstract:
Etch residue, resulting from a process used in forming a via, is removed using a process that does not require using a liquid chemical solvent and does not result in excessive charge build-up in the via. One step is to use a fluorocarbon and oxygen. These gases are energized by both microwave and RF. Another step is to introduce argon, in addition to the other two gases, also energized by microwave and RF. This has the effect of removing any additional residue which tends to stick on the surface above the via as well completing the removal of etch residue in the via. An additional step is simply to apply de-ionized water to remove any remaining fluorinated residue that, as a result of the preceding two steps, is highly soluable in water.
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Inventors:
Nguyen, Tenti.
Medina, Valentin Jr.
Dopp, Douglas Jay.
Medina, Valentin Jr.
Dopp, Douglas Jay.
Application Number:
JP2002541715A
Publication Date:
June 10, 2004
Filing Date:
November 06, 2001
Export Citation:
Assignee:
MOTOROLA INCORPORATRED
International Classes:
H01L21/3065; G03F7/42; H01L21/00; H01L21/02; (IPC1-7): H01L21/3065
Attorney, Agent or Firm:
Mamoru Kuwagaki