To provide a method for removing moisture in a vacuum container at a high rate.
Substrate treatment equipment 1 comprises a process ship 11 which comprises plasma treatment equipment 100 performing RIE treatment, and a load lock module 27 for delivering a wafer W to the plasma treatment equipment 100. The plasma treatment equipment 100 has an aluminium tubular chamber 111 having an alumite coating on the inner wall wherein a gas introduction shower head 132 is arranged on the ceiling of the chamber 111. A system controller of the plasma treatment equipment 100 exhausts the chamber 111 by means of a TMP 116 and a DP 117 after the chamber 111 is opened to the atmosphere and then a lid is closed and introduces gas from which moisture is removed, i.e. the mixture gas of CF4 and CO, from the gas introduction shower head 132 if the content of moisture in the chamber 111 is not lower than a predetermined level.
NAKAYAMA HIROYUKI
NAGAIKE HIROSHI
| JPH1098019A | 1998-04-14 | |||
| JP2001338967A | 2001-12-07 |
Satoshi Muramatsu
Natsuki Goto
Hiroshi Ikeda
Hiroyasu Ninomiya