PURPOSE: To prevent delamination of an underlying Ti based adhesion layer, at the time of depositing a blanket tungsten, by growing Si nuclei at least in the region to be covered by a second jig on the surface between a substrate and the Ti based adhesion layer after finishing a first step before starting a second step.

CONSTITUTION: A titanium based adhesion layer 5 is formed on a substrate 100 while covering at least a part of the peripheral edge part by means of a first jig 10 (first step). CVD is then carried out while covering the region to be covered of the substrate 100 entirely by means of a second jig 20 thus depositing tungsten 7 on the titanium based adhesion layer 5 (second step). When a wiring film is deposited in this way, silicon nuclei 6 are grown at least in the region to be covered with the second jig on the surface between the substrate 100 and the titanium adhesion layer 5 after finishing the first step before starting the second step. For example, the Si nuclei 6 are grown by LPCVD using SiH4.