Title:
METHOD AND SYSTEM FOR DRYING WAFER
Document Type and Number:
Japanese Patent JP3247673
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a method and a system for drying a wafer in which drying efficiency can be enhanced while shortening the drying time.
SOLUTION: Nitrogen gas is ejected into a space above the liquid level of pure water in a drying chamber where a wafer is immersed and, at the same time, liquid-phase isopropyl alcohol is ejected at a temperature higher than that of the wafer in the vicinity of an opening for ejecting nitrogen gas thus spraying mist-like IPA(isopropyl alcohol) into the space. When the wafer is exposed from the liquid level of pure water in the drying chamber, pure water adhering to the opposite sides of the wafer is substituted by mist-like IPA and evaporated thus drying the wafer.
Inventors:
Yutaka Keto
Sadao Takemura
Susumu Matsuda
Sadao Takemura
Susumu Matsuda
Application Number:
JP33125599A
Publication Date:
January 21, 2002
Filing Date:
November 22, 1999
Export Citation:
Assignee:
Toho Kasei Co., Ltd.
International Classes:
B05B7/02; F26B5/16; F26B7/00; F26B13/24; H01L21/304; (IPC1-7): H01L21/304; B05B7/02; F26B5/16; F26B13/24
Domestic Patent References:
| JP969509A | ||||
| JP2000124187A | ||||
| JP11176796A | ||||
| JP1126420A | ||||
| JP6103686B2 |
Attorney, Agent or Firm:
Aoyama Ryo (2 outside people)