Title:
METHOD FOR VAPOR GROWTH
Document Type and Number:
Japanese Patent JPH02111694
Kind Code:
A
Abstract:
PURPOSE:To provide the title method in which multi-growth chamber to obtain crystal of hetero structure is set up, so designed that when a substrate is moved into each growth chamber, the substrate blocks said chamber so as to prevent gases from mixing, thereby obtaining high-quality hetero-structured crystal prevented from contamination due to the components of other crystal layers. CONSTITUTION:A substrate 4 to be grown is successively transferred to a plurality of growth chambers (e.g., 2 and 3) in a growth furnace 1 to sequentially grow a plurality of growth layers differing from each other (e.g., InP/InGaAs/InP). In this process, the opening of the growth chamber (e.g., 2) where said substrate 4 is located is clocked with a substrate holder 12 (drive 11) holding said substrate 4, and a vapor growth gas is exhausted through a vent 13 on the holder 12.
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Inventors:
MORIMOTO TAKUO
Application Number:
JP26554288A
Publication Date:
April 24, 1990
Filing Date:
October 21, 1988
Export Citation:
Assignee:
NEC CORP
International Classes:
C30B25/14; H01L21/205; (IPC1-7): C30B25/14; H01L21/205
Attorney, Agent or Firm:
Sugano Naka