Title:
PRODUCTION OF DIAMOND CARBON THIN FILM
Document Type and Number:
Japanese Patent JPH02111695
Kind Code:
A
Abstract:
PURPOSE:To simply obtain the title high-purity thin film by applying a bias, through a specific system, between an ECR ion source-including cavity and a substrate to introduce a carbon-contg. material into a vacuum chamber and by generating electronic cyclotron resonance plasma. CONSTITUTION:Using an ion source (cavity 1) of electronic cyclotron resonance system electrically insulated via an insulator 2 against a vacuum chamber 3, the voltage of the resonance cavity of this ion source is set at +150V relative to that of a substrate 8 set up against the opening 7 of said ion source to introduce a carbon-contg. material gas 13 into the vacuum chamber 3, and an electronic cyclotron resonance plasma is generated (ionic beams 17 drawn from the ECR cavity 1 are irradiated on the substrate 8) to effect film formation on the substrate 8.
Inventors:
NAGAI ITSUO
ISHITANI KEI
ISHITANI KEI
Application Number:
JP26504888A
Publication Date:
April 24, 1990
Filing Date:
October 20, 1988
Export Citation:
Assignee:
JAPAN RES DEV CORP
NAGAI ITSUO
ISHITANI KEI
NAGAI ITSUO
ISHITANI KEI
International Classes:
C30B29/04; (IPC1-7): C30B29/04
Domestic Patent References:
| JPS60103099A | 1985-06-07 | |||
| JPS6383271A | 1988-04-13 |
Attorney, Agent or Firm:
Toshio Nishizawa
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