Title:
MEW GROUP IV METAL PRECURSOR AND CHEMICAL VAPOR DEPOSITION METHOD USING THE SAME
Document Type and Number:
Japanese Patent JP2002145836
Kind Code:
A
Abstract:
To provide a group IV metal precursor having excellent volatility and thermal properties and chemical stability to hydrolysis, and suitable for the chemical vapor deposition for a multicomponent metal oxide thin film containing a group IV metal such as titanium in particular.
This new group IV metal precursor consists of a complex (L)2 composed of a tridentate ligand (L) of the general formula (R1 and R2 are each a 1-8C straight-or branched-chain alkyl; and R3 is a 1-8C straight-or branched-chain alkylene) and a tetravalent group IV metal (M). Using the precursor, a metal oxide thin film is formed by chemical vapor deposition.
Inventors:
MIN YO SEP
CHO YOUNG JIN
KIM DAE SIK
LEE IK MO
LIM SUN KWIN
RI KANIN
CHOI BO HYUN
CHO YOUNG JIN
KIM DAE SIK
LEE IK MO
LIM SUN KWIN
RI KANIN
CHOI BO HYUN
Application Number:
JP2001252429A
Publication Date:
May 22, 2002
Filing Date:
August 23, 2001
Export Citation:
Assignee:
SAMSUNG ELECTRONICS CO LTD
International Classes:
C07C225/14; C07F3/00; C07F7/28; C23C16/40; (IPC1-7): C07C225/14; C23C16/40
Attorney, Agent or Firm:
Mikio Hatta (4 outside)