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Title:
MgO VAPOR DEPOSITION MATERIAL AND PRODUCTION METHOD THEREFOR
Document Type and Number:
Japanese Patent JP2003226960
Kind Code:
A
Abstract:

To provide an electron beam vapor deposition method in which splashes are hard to occur even on vapor deposition by, and the film properties of an MgO film to be deposited is improved.

The vapor deposition material consists of polycrystals having an MgO purity of ≥99.0% and a relative density of ≥90.0%, and having a phosphorus P content of 0.01 to 30 ppm.


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Inventors:
SAKURAI HIDEAKI
TOYOGUCHI GINJIRO
KUROMITSU YOSHIO
Application Number:
JP2002335652A
Publication Date:
August 15, 2003
Filing Date:
November 19, 2002
Export Citation:
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Assignee:
MITSUBISHI MATERIALS CORP
International Classes:
C04B35/053; C23C14/24; H01J9/02; H01J11/22; H01J11/34; H01J11/40; (IPC1-7): C23C14/24; C04B35/053
Attorney, Agent or Firm:
Masatake Shiga (6 people outside)



 
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