To uniformize plasma density in a plasma generating region in CVD, etching or the like by a microwave plasma device and to provide a microwave plasma device uniform in thickness distribution and coating performance.
To the surface of a substrate 3 to be applied with plasma, a microwave introducing window 6 is set at an angle approximately same as the leakage angle of microwaves, by which plasma is uniformized, and the production of a thin coating film uniform in thickness distribution is made possible. Furthermore, an introducing gas 8 to be converted into plasma is introduced in accordance with the distribution of electric field strength by microwaves, by which the plasma density is uniformized, and the production of thin coating film uniform in thickness distribution and coating performance is made possible.
NISHIZAWA YASUHIRO
YOSHIDA HIDEKI
