PURPOSE: To make a plasma density at the time of contact with a sample uniform by setting a direction of a line of magnetic force and a direction of a microwave parallel to a surface of the sample, and further generating a plasma of the same distribution as that of the line of magnetic force of an elliptical section as the distribution of the line of magnetic force.
CONSTITUTION: A microwave is introduced into a chamber 1 through an inlet window 6. When a propagating direction of the microwave 8 is a Z axis, the chamber 1 is long in a z direction and a sample base 2 is a plane parallel to an x-z plane. A longitudinal magnetic field of the z direction is generated by a DC magnetic field by coils 4, 7, extended in an x direction (parallel to the surface of the sample) and contracted in a y direction. The extension of the density is decided in response to the extension of the line of magnetic force. Thus, since the direction of the line of magnetic force is parallel to that of the surface of the sample, a uniform etching speed is obtained, and since the plasma is widely extended, the sample having a large area or many samples can be simultaneously etched.
YAMASHITA TAKATOSHI
FUJIWARA SHUICHI
INAI YUTAKA
INAMI HIROSHI
MATSUNAGA KOJI
Next Patent: SEMICONDUCTOR MANUFACTURING SYSTEM, AND PLASMA CLEANING METHOD