To provide a MOCVD apparatus which can excellently and stably form a crystal on the front surface of a substrate, and which can obtain a semiconductor laser element having excellent characteristics with a high production efficiency.

The MOCVD apparatus includes a substrate supporting means (21) for supporting a substrate (22), and a first heating means (23) for heating the substrate in a chamber (37). Further, the MOCVD apparatus includes a second heating means (28) for high frequency heating, a hold room (30)which is connected and provided in the exterior of the side wall of a chamber to hold the second heating means (28), and a moving means (35A) for moving the second heating means between the interior of the chamber and the hold room (30). The pressure of the hold room interior can be controlled independently with the chamber.