MONOCRYSTALLINE WAFER MATERIAL FOR FORMING SUPERCONDUCTIVE CERAMIC THIN FILM FOR MANUFACTURING SEMICONDUCTOR ELEMENT

Japanese Patent JPH01305579

A

PURPOSE:To elevate the critical temperature of a superconductive thin film, by forming the five-component superconductive ceramic thin film on the surface of a monocrystalline wafer material through a four-component intermediate ceramic thin film. CONSTITUTION:A five-component superconductive ceramic film of Bi-Ca-Sr-Cu-O is formed on the surface of a monocrystalline wafer material of Si or Ga-As through a four-component intermediate ceramic thin film of Bi-Ca-Sr-O. Forming the intermediate ceramic of 500-2000Angstrom thickness provides the superconductive thin film with the desired critical temperature effect and enables economically forming the film. The superconductive ceramic thin film constituting this monocrystalline wafer material with a superocnductive ceramic thin film formed thereon has a high critical temperature. Semiconductor elements made of this material are suitable for the improvement of performance and packaging density and show the useful characteristics in industrial use.

JP2866265	[Title of the Invention] A method for producing a highly critical temperature superconducting flexible conductor.
JPH0195416	FORMATION OF SUPERCONDUCTING THIN FILM
JPH02258694	PRODUCTION OF OXIDE SUPERCONDUCTOR

SUGIHARA TADASHI
TAKESHITA TAKUO

JP13673088A

December 08, 1989

June 03, 1988

Click for automatic bibliography generation  

MITSUBISHI METAL CORP

C30B29/22; C23C14/08; H01B12/06; H01L39/02; (IPC1-7): C23C14/08; C30B29/22; H01B12/06; H01L39/02

Kazuo Tomita (1 person outside)

Previous Patent: PHOTODIODE

Next Patent: MONOCRYSTALLINE WAFER MATERIAL FOR FORMING SUPERCONDUCTIVE CERAMIC THIN FILM FOR MANUFACTURING SEMIC...