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Title:
MONOMER FOR PHOTORESIST, PHOTORESIST POLYMER AND METHOD FOR MANUFACTURING SAME, PHOTORESIST COMPOSITION, METHOD FOR FORMING PHOTORESIST PATTERN AND SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2001163926
Kind Code:
A
Abstract:

To provide a monomer for a photoresist having high transparency in a far ultraviolet light range and excellent etching and heat resistances.

The monomer for a photoresist is selected from compounds of the formulas (2a) and (2b) (wherein R1 represents a protective group sensitive to an acid, R2 to R4 independently represent H or a protective group sensitive to an acid, and n is an integer of 1 to 3).


Inventors:
CHOI JAE HAK
KICHI MEIKUN
Application Number:
JP2000310887A
Publication Date:
June 19, 2001
Filing Date:
October 11, 2000
Export Citation:
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Assignee:
HYUNDAI ELECTRONICS IND
International Classes:
G03F7/004; C07C69/34; C07C69/602; C08F4/04; C08F4/32; C08F36/20; C08K5/00; C08K5/521; C08K5/59; C08L47/00; G03F7/039; H01L21/027; (IPC1-7): C08F36/20; C07C69/34; C08F4/04; C08K5/00; C08L47/00; G03F7/039; H01L21/027
Attorney, Agent or Firm:
Hiroshi Arafune (1 person outside)