Title:
MONOMER, POLYMERIC COMPOUND, RESIST MATERIAL AND PATTERN FORMING METHOD
Document Type and Number:
Japanese Patent JP2014136708
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a compound that can be applied both for alkali development and organic solvent development processes, has a high dissolution contrast and is useful as a monomer for base resin for highly sensitive photoresist material, a polymeric compound derived from the monomer, a resist material containing the polymeric compound as base resin, and a pattern forming method using the resist material.SOLUTION: The monomer is expressed by general formula (1). A photoresist film comprising an acid generator and a polymeric compound including a repeating unit obtained from the monomer exhibits a characteristic of a high dissolution contrast with high solubility in an unexposed part and low solubility in an exposed part, not only in a process of forming a positive pattern by alkali development but in a process of forming a positive-negative reversal image by organic solvent development. A fine hole pattern can be formed with good dimensional control and high sensitivity by exposing the photoresist film through a lattice pattern mask and developing the film with an organic solvent.
Inventors:
SAGEHASHI MASAYOSHI
HASEGAWA KOJI
KATAYAMA KAZUHIRO
HASEGAWA KOJI
KATAYAMA KAZUHIRO
Application Number:
JP2013004273A
Publication Date:
July 28, 2014
Filing Date:
January 15, 2013
Export Citation:
Assignee:
SHINETSU CHEMICAL CO
International Classes:
C08F20/28; G03F7/004; G03F7/038; G03F7/039; G03F7/32
Domestic Patent References:
| JP2014137473A | 2014-07-28 | |||
| JP2014025085A | 2014-02-06 | |||
| JP2014137473A | 2014-07-28 |
Attorney, Agent or Firm:
Takashi Kojima
Saori Shigematsu
Katsunari Kobayashi
Takeshi Ishikawa
Katsuhiko Masaki
Saori Shigematsu
Katsunari Kobayashi
Takeshi Ishikawa
Katsuhiko Masaki