Title:
ANALYZING METHOD FOR METALLIC IMPURITY IN SURFACE OXIDE FILM OF SEMICONDUCTOR SUBSTRATE
Document Type and Number:
Japanese Patent JP3044881
Kind Code:
B2
Abstract:
PURPOSE: To obtain an analyzing method of metallic impurities in the surface oxide film of a semiconductor substrate wherein a simple, small-sized means which is obtained at a low cost and dose not require vacuum operation is used, and further detection sensitivity in the order of 1010 atoms/cm is realized.
CONSTITUTION: The amount of fixed electric charge caused by metallic impurities existing in a surface oxide film formed on a semiconductor substrate is measured. Correlation between the metallic impurities amount and the fixed charge amount is obtained. On the basis of the above correlation, the metallic impurities in the oxide film is quantified from the fixed charge amount of the surface oxide film as an object to be analyzed. Correlation between the depth direction distance of a thermal oxide film formed on a silicon substrate and the amount of fixed charge caused by metallic impurities in the thermal oxide film is obtained. Independently of the above, correlation between the amount of metallic impurities in the thermal oxide film and the amount of fixed charge caused by the metallic impurities is obtained. On the basis of these correlations, the concentration distribution of metallic impurities in the thermal oxide film can be obtained.
Inventors:
Juri Kato
Application Number:
JP30920691A
Publication Date:
May 22, 2000
Filing Date:
November 25, 1991
Export Citation:
Assignee:
Seiko Epson Corporation
International Classes:
G01R31/26; G01N33/20; H01L21/66; (IPC1-7): H01L21/66; G01R31/26
Attorney, Agent or Firm:
Kisaburo Suzuki (1 outside)