Title:
FORMATION METHOD FOR THROUGH-HOLE AND EMBEDDED PATTERN, ADJUSTING METHOD FOR BEAM AND EXPOSURE METHOD FOR CHARGED PARTICLE BEAM
Document Type and Number:
Japanese Patent JP3004240
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To form a fine through-hole in a thick tungsten (W) film.
SOLUTION: A W film 2 is formed on an Si substrate 1. Then, an SiO2 film 3 is formed on the W film 2, it is patterned, and a fine through-hole pattern which is composed of the SiO2 film 3 is formed. Then a W film 6 which covers the through-hole pattern (the SiO2 film 3) is formed on the W film 2. Then, the Si substrate 1, the W film 2, the through-hole pattern and the W film 6 are cut so as to cross the through-hole pattern. Then, a face which is exposed by their cutting operation is polished to as to be a required thickness. Lastly, the through-hole pattern is removed by a wet etching operation. Thereby, a fine through-hole can be formed in the W films 2, 6.
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Inventors:
Yoshimitsu Kato
Tetsuro Nakasugi
Jun Takamatsu
Waka Sugihara
Tetsuro Nakasugi
Jun Takamatsu
Waka Sugihara
Application Number:
JP32922197A
Publication Date:
January 31, 2000
Filing Date:
November 28, 1997
Export Citation:
Assignee:
Toshiba Corporation
International Classes:
G03F1/76; G03F7/20; H01L21/027; H01L21/3205; H01L21/768; (IPC1-7): H01L21/027; G03F7/20
Attorney, Agent or Firm:
Takehiko Suzue (6 outside)