Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPH0574775
Kind Code:
A
Abstract:
PURPOSE: To obtain a semiconductor device excellent in reliability.
CONSTITUTION: A barrier metal layer 3 is made to extend in a peripheral direction from the end of a bump 4, the extension of the barrier metal layer 3 is prevented from coming into contact with a pad 2. As the distance between the bump 4 and the pad 2 becomes long, so that the component atom of the bump 4 hardly reaches the pad 2 diffusing into the surface of the barrier metal layer 3. Therefore, the barrier metal layer 3 hardly deteriorates in intrinsic function, a bump is hardly lessened in structural strength, and a semiconductor device of this design car be prevented from deteriorating in reliability.
Inventors:
YASUNAGA MASATOSHI
Application Number:
JP23806691A
Publication Date:
March 26, 1993
Filing Date:
September 18, 1991
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
H01L21/60; H01L21/321; (IPC1-7): H01L21/321
Attorney, Agent or Firm:
Mamoru Takada (1 person outside)
Next Patent: MOUNTING STRUCTURE OF SEMICONDUCTOR DEVICE