PURPOSE: To provide a method, in which the generation of a hole in the surface of a bonding pad having TiN/Pt/Au structure due to heat treatment at the time of the formation of the pad is prevented, and to obviate bonding peeling regarding the forming method of the pad.

CONSTITUTION: The manufacture of a semiconductor device is constituted so as to have a process, in which a TiN film 4, a Pt film 5, and an Au film 6 are applied successively onto a semiconductor substrate 1, a process, in which an Al film 7 is formed in a specified region on the Au film and the Au film and the Pt film are etched through a reverse sputtering method using a sputtering gas while employing the Al film as a mask, a process, in which the Al film is removed through etching, a process, in which a resist film 8 is shaped onto the Au film and the TiN film is etched while using the resist film as a mask, and a process, in which the substrate is thermally treated.