半導体装置 - ソニー株式会社

Title:

半導体装置

Document Type and Number:

Japanese Patent JP4225300

Kind Code:

B2

Abstract:

To provide a semiconductor device that has a large flexibility, in terms of process temperature and time in the process, after plug formation.

In a semiconductor device using a plug, a non-proliferation layer is formed between the plug and a diffusion layer or Al alloy wiring connected to the plug, and the nonproliferation layer is made of materials which can be represented by composition Formula MIaMIIbOc(where a, b, and c are compositions represented by atom%, MIis at least one kind of precious metal selected from among a group of Pt, Ir, Ru, Rh and Pd, and MIIis at least one kind of transition metal selected from among a group of Hf, Ta, Zr, Nb, V, Mo and W) and whose composition respective ranges are 90≥a≥40, 15≥b≥2, 4≤c and a+b+c=100.

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Inventors:

Kenji Katori
Nicholas Nagel
Koji Watanabe

Application Number:

JP2005208663A

Publication Date:

February 18, 2009

Filing Date:

July 19, 2005

Export Citation:

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Assignee:

ソニー株式会社

International Classes:

H01L21/28; H01L21/768; H01L21/8242; H01L21/8246; H01L27/105; H01L27/108; H01L29/417

Domestic Patent References:

JP4181766A
JP10022469A
JP6326270A
JP8288239A
JP10126003A
JP9260603A

Attorney, Agent or Firm:

Koichi Mori

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