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Title:
【発明の名称】▲II▼―▲VI▼族化合物半導体の結晶成長方法
Document Type and Number:
Japanese Patent JP2525930
Kind Code:
B2
Abstract:
A ZnSe source crystal is treated in a Se vapor pressure peaks are obtained when the Se pressure is 6 to 9 atoms dissolved in a Zn solvent to the saturation concentration at a high temperature portion in the solution. A ZnSe single crystal is grown on an underlie substrate placed at a low temperature portion in the solution. When the temperature of the vapor pressure treatment is 1050 DEG C., excellent photoluminescence peaks are obtained when the Se pressure is 6 to 9 atoms.

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Inventors:
Michihiro Sano
Okuno Yasuo
Application Number:
JP12447990A
Publication Date:
August 21, 1996
Filing Date:
May 15, 1990
Export Citation:
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Assignee:
Stanley Electric Co., Ltd.
International Classes:
C30B11/00; C30B19/04; C30B29/48; H01L21/208; H01L21/368; (IPC1-7): C30B19/04; C30B11/00; C30B29/48; H01L21/208; H01L21/368
Attorney, Agent or Firm:
Keishiro Takahashi



 
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