Title:
NETRIDE SEMICONDUCTOR LASER DEVICE AND MANUFACTURING METHOD THEREOF
Document Type and Number:
Japanese Patent JP3878707
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To obtain a high-efficiency specified GaAlInN laser element having an optical guide structure having a refractive index distribution in horizontal direction by forming a ridge stripe-like second conductivity type upper clad layer extending toward a resonator.
SOLUTION: A GaxAlyIn1-x-yN (0≤x≤1, 0≤y≤1, x+y≤1) laser element has a ridge stripe shape. The surface protection of a ridge stripe-like p-type GaAlN upper clad layer 21b may have a double layer structure formed by leaving a SiO2 film used for the selective growth and laminating an Al2O3 film 9 thereon. Thus it is possible to suppress the poor current injection, lower the oscillation threshold level and reduce the astigmatic difference of the GaN compd. semiconductor laser element having the ridge strip structure as well as to double the protective film of the upper clad layer 21b to thereby elevate the protection effect and improve the lift of the laser element.
Inventors:
Kazuhiko Inoguchi
Application Number:
JP3592797A
Publication Date:
February 07, 2007
Filing Date:
February 20, 1997
Export Citation:
Assignee:
Sharp Corporation
International Classes:
H01S5/22; H01L33/06; H01L33/14; H01L33/16; H01L33/32; H01S5/00; H01S5/323; H01S5/343; (IPC1-7): H01S3/18; H01L33/00
Domestic Patent References:
| JP5343737A | ||||
| JP8017803A | ||||
| JP5190900A | ||||
| JP3142985A | ||||
| JP54006788A |
Other References:
Yoshiki Kato, Shota Kitamura, Kazumasa Hiramatsu and Nobuhiko Sawaki,Selective growth of wurtzite GaN and AlxGa1-xN on GaN/sapphire substrates by metalorganic vapor phas,Journal of Crystal Growth,1994年12月,144,pp133-140
Attorney, Agent or Firm:
Kuro Fukami
Toshio Morita
Yoshihei Nakamura
Yutaka Horii
Hisato Noda
Masayuki Sakai
Toshio Morita
Yoshihei Nakamura
Yutaka Horii
Hisato Noda
Masayuki Sakai