NITRIDE-BASED COMPOUND SEMICONDUCTOR SUBSTRATE AND METHOD OF PRODUCING THE SAME

Title:

NITRIDE-BASED COMPOUND SEMICONDUCTOR SUBSTRATE AND METHOD OF PRODUCING THE SAME

Document Type and Number:

Japanese Patent JP2001192300

Kind Code:

A

Abstract:

To provide a nitride-based compound semiconductor substrate low in residual stress and almost free from crystal defects.

A ground layer 102 of a nitride-based compound semiconductor doped with an impurity is deposited at 300 to 800°C on a crystalline base material 101 of sapphire or the like. Then, a crystal 103 of the nitride-based compound semiconductor is grown at a temperature higher than the temperature mentioned above on the ground layer 102. Further, the ground layer 102 is removed by etching, thereby the crystal 103 of the nitride-based compound semiconductor is separated as the substrate 105. Finally, the residual stress of the separated substrate 105 is reduced by heat treatment under an atmosphere containing nitrogen.

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Inventors:

UEDA YOSHIHIRO
TSUDA YUZO
YUASA TAKAYUKI
OGAWA ATSUSHI
ARAKI MASAHIRO
TAKAKURA TERUYOSHI

Application Number:

JP2000000072A

Publication Date:

July 17, 2001

Filing Date:

January 04, 2000

Export Citation:

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Assignee:

SHARP KK

International Classes:

C30B29/38; H01L21/20; H01L21/324; H01L33/06; H01L33/16; H01L33/20; H01L33/32; (IPC1-7): C30B29/38; H01L21/20; H01L21/324; H01L33/00

Domestic Patent References:

JPH11251253A	1999-09-17
JPH07165498A	1995-06-27

Attorney, Agent or Firm:

Fukami Hisaro

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