Title:
METHOD OF HONING PROCESSING OF SINGLE CRYSTAL WAFER
Document Type and Number:
Japanese Patent JP2001192296
Kind Code:
A
Abstract:
To provide a honing processing method for a single crystal wafer, which is capable of improving the processing yield and the yield in device process.
This method for honing processing comprises integrally arranging an ultraviolet curing film with a protective film on the main surface to be processed of a single crystal wafer, then heating the single crystal wafer to peel off the protective film, lowering the temperature of the single crystal wafer to a temperature lower than that at which the protective film is peeled, exposing the film to light, developing to form a fine hole pattern and finally subjecting to honing processing.
Inventors:
INOUE YUJI
Application Number:
JP2000322710A
Publication Date:
July 17, 2001
Filing Date:
January 13, 1992
Export Citation:
Assignee:
TOSHIBA CORP
International Classes:
B24B33/00; C30B29/30; H01L21/304; H01L41/18; H01L41/22; H01L41/335; (IPC1-7): C30B29/30; B24B33/00; H01L21/304; H01L41/18; H01L41/22
Attorney, Agent or Firm:
Suyama Saichi