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Title:
NITRIDE-BASED SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD
Document Type and Number:
Japanese Patent JP2003017790
Kind Code:
A
Abstract:

To provide a manufacturing method of a laser beam resonator having high reproducibility and yields by forming a separation groove where flatness on a section is excellent on an AlGaInN-based crystal substrate.

In an AlGaInN-based laser wafer manufactured on a sapphire substrate, the substrate is irradiated with a pulse laser beam from the back side, and then is applied to an AlGaInN-based crystal section other than the laser resonator section of a surface for forming a separation groove. After that, force is applied along the separation groove for separating the substrate to a laser bar. In this manner, the surface of the resonator where flatness is extremely high and a reflection loss rarely exists is achieved, thus achieving manufacture with high reproducibility and yields.


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Inventors:
ISHIBASHI AKIHIKO
KAWAGUCHI YASUTOSHI
OTSUKA NOBUYUKI
Application Number:
JP2001201628A
Publication Date:
January 17, 2003
Filing Date:
July 03, 2001
Export Citation:
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Assignee:
MATSUSHITA ELECTRIC IND CO LTD
International Classes:
B23K26/00; H01L33/32; H01S5/02; H01S5/323; B23K101/40; (IPC1-7): H01S5/02; B23K26/00; H01L33/00; H01S5/323
Domestic Patent References:
JPH1070335A1998-03-10
JPH04262589A1992-09-17
JPH11224866A1999-08-17
JP2001085736A2001-03-30
Attorney, Agent or Firm:
Fumio Iwahashi (2 others)



 
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