窒化物半導体装置および窒化物半導体装置の製造方法

Title:

窒化物半導体装置および窒化物半導体装置の製造方法

Document Type and Number:

Japanese Patent JP7210979

Kind Code:

B2

Abstract:

To provide a technique capable of forming a high-quality p-type region in a nitride semiconductor.SOLUTION: A method for manufacturing a nitride semiconductor device comprises the steps of: forming an n-type GaN layer on a GaN substrate by an epitaxial growth method; forming a low-concentration p-type GaN layer on an upper surface of the n-type GaN layer by the epitaxial growth method; forming a high-concentration p-type GaN layer on an upper surface of the low-concentration p-type GaN layer by the epitaxial growth method; and diffusing hydrogen contained in the low-concentration p-type GaN layer into the high-concentration GaN layer by performing annealing in an inert atmosphere (annealing step).SELECTED DRAWING: Figure 2

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Inventors:

Kazuyoshi Tomita
Narita Tetsuo

Application Number:

JP2018185118A

Publication Date:

January 24, 2023

Filing Date:

September 28, 2018

Export Citation:

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Assignee:

Toyota Central R & D Labs.

International Classes:

H01L21/336; H01L21/20; H01L21/324; H01L29/12; H01L29/78

Domestic Patent References:

JP2010109276A
JP2015056486A
JP2002541668A
JP2007250780A

Foreign References:

WO2017163881A1

Attorney, Agent or Firm:

Patent Attorney Corporation Kaiyu International Patent Office

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