NITRIDE SEMICONDUCTOR FORMED ON SILICON SUBSTRATE, AND MANUFACTURING METHOD THEREFOR

Title:

NITRIDE SEMICONDUCTOR FORMED ON SILICON SUBSTRATE, AND MANUFACTURING METHOD THEREFOR

Document Type and Number:

Japanese Patent JP2005123619

Kind Code:

A

Abstract:

To provide a nitride semiconductor formed on a silicon substrate, and a method for manufacturing the same.

The nitride semiconductor comprises a silicon substrate 20, a buffer layer 21 formed on the silicon substrate 20, an intermediate layer 23 containing voids 22 formed on the buffer layer 21, a planarizing layer 24 formed on the intermediate layer 23, and a nitride semiconductor layer 25 formed on the planarizing layer 24. By the manufacturing method of the nitride semiconductor, the mass production of the nitride semiconductor with a significantly reduced number of internal crystal defects, dislocations or cracks is enabled.

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Inventors:

YOON SUK-HO
LEE CHEUL-RO
LEE JEONG-WOOK
LEE SUNG-SOOK

Application Number:

JP2004297529A

Publication Date:

May 12, 2005

Filing Date:

October 12, 2004

Export Citation:

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Assignee:

SAMSUNG ELECTRO MECH

International Classes:

C30B25/18; C30B29/40; H01L21/20; H01L21/205; C23C16/34; H01L33/12; H01L33/32; H01L33/34; H01L29/20; (IPC1-7): H01L21/205; C23C16/34; H01L33/00

Attorney, Agent or Firm:

Mikio Hatta
Yasuo Nara
Etsuko Saito
Katsuyuki Utani
Toshifumi Fujii

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