NITRIDE SEMICONDUCTOR LASER ELEMENT AND FORMING METHOD OF ITS RESONATOR

Japanese Patent JP3484842

B2

PROBLEM TO BE SOLVED: To prevent the generation of uneveness, crack and break, by constituting a substrate of spinel, and making a resonator of sections wherein a nitride semiconductor wafer laminated on the substrate is cut off.
SOLUTION: An N-type contact layer 2, an N-type clad layer 3, an N-type optical guide layer 4, an active layer 5, a P-type optical guide layer 6 and a P-type clad layer 7 are grown in order on a single crystal spinel substrate 1. On the layer 7, a protective layer is formed, on which an N-type current blocking layer 8 and a P-type contact layer 9 are grown. A positive electrode containing Ni and Au is formed almost at the center of the P-type contact layer 9. A stripe type negative electrode containing Ti and AQ is formed on the surface of the N-type contact layer 2. In the direction rectangular to the stripe electrode, scribing is performed, and the face wherein the wafer is divided in the direction is made a resonator. Since the crystal of spinel is softer than sapphire, working is easy. Generation of unevenness, crack and break of the nitride semiconductor layer of the resonance surface of the cut-off chip can be prevented.

Tokuya Kozaki
Shuji Nakamura

JP27522095A

January 06, 2004

October 24, 1995

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Nichia Corporation

H01L33/06; H01L33/14; H01L33/16; H01L33/22; H01L33/32; H01L33/40; H01S5/00; H01S5/343; (IPC1-7): H01S5/343; H01L33/00

JP6152072A
JP4953388A

【文献】1995年春季第42回応用物理学関係連合講演会予稿集,1995年,28p-ZH-12
【文献】1995年度電気関係学会東海支部連合大会講演論文集,1995年,p.149

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