Title:
NITRIDE SEMICONDUCTOR LASER ELEMENT
Document Type and Number:
Japanese Patent JP3888170
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a nitride semiconductor laser element in which the laser is oscillated by concentrating a current onto an active layer.
SOLUTION: Since a stripe positive electrode is formed on the surface of a p-type layer etched into a stripe while contacting with the p-type layer over its width substantially same as the width of the stripe, a current of the positive electrode does not spread in the p-type layer but is concentrated onto the active layer. In an alternative embodiment, the positive electrode is extended from the surface of a p-type contact layer onto an n-type contact layer via an insulation film and positive and negative electrodes are provided on the n-type contact layer to constitute a laser element structure being wire-bonded.
More Like This:
Inventors:
Takao Yamada
Masayuki Senoo
Shuji Nakamura
Masayuki Senoo
Shuji Nakamura
Application Number:
JP2002017613A
Publication Date:
February 28, 2007
Filing Date:
December 06, 1995
Export Citation:
Assignee:
Nichia Corporation
International Classes:
H01S5/22; H01S5/028; H01S5/323; H01S5/343; (IPC1-7): H01S5/22; H01S5/028; H01S5/323
Domestic Patent References:
| JP6132606A | ||||
| JP7022704A | ||||
| JP4242985A | ||||
| JP63283090A |
Attorney, Agent or Firm:
Hisao Ishii
Kei Tamura
Kei Tamura