Title:
NITRIDE SEMICONDUCTOR ULTRAVIOLET LIGHT-EMITTING DEVICE
Document Type and Number:
Japanese Patent JP2013120829
Kind Code:
A
Abstract:
To provide a nitride semiconductor ultraviolet light-emitting device having improved light emission intensity.
The nitride semiconductor ultraviolet light-emitting device comprises: one or more first conductive type nitride semiconductor layers; a light-emitting layer of a nitride semiconductor; one or more second conductive type nitride semiconductor layers; and a translucent conductive film which is a crystallized Mgx1Zn1-x1O (0<x1<1) and transmits 75% or more of light from the light-emitting layer. The layers are sequentially laminated on a support substrate.
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Inventors:
YAMAMOTO HIDEICHIRO
HIRUKAWA SHUICHI
OTA MASATAKA
HIRUKAWA SHUICHI
OTA MASATAKA
Application Number:
JP2011267762A
Publication Date:
June 17, 2013
Filing Date:
December 07, 2011
Export Citation:
Assignee:
SHARP KK
International Classes:
H01L33/42; H01L33/32; H01L33/36
Domestic Patent References:
| JP2006339384A | 2006-12-14 | |||
| JP2010116621A | 2010-05-27 | |||
| JP2004349584A | 2004-12-09 | |||
| JP2006278554A | 2006-10-12 | |||
| JP2011151393A | 2011-08-04 | |||
| JP2005167237A | 2005-06-23 |
Other References:
JPN6015029943; Ｃｈｏｏｐｕｎ 他: '"Ｒｅａｌｉｚａｔｉｏｎ ｏｆ ｂａｎｄ ｇａｐ ａｂｏｖｅ ５．０ ｅＶ ｉｎ ｍｅｔａｓｔａｂｌｅ ｃｕｂｉｃ-ｐｈａｓｅ Ｍｇ ｘ Ｚｎ １？ｘ Ｏ ａｌｌｏｙｆｉｌｍｓ"' ＡＰＰＬＩＥＤ ＰＨＹＳＩＣＳ ＬＥＴＴＥＲＳ ＶＯＬＵＭＥ ８０， ＮＵＭＢＥＲ ９, 20020304, ｐ．１５２９-１５３１
JPN6015029945; Ｐａｒｋ 他: '"Ｍｅｔａｌｏｒｇａｎｉｃ ｖａｐｏｒ-ｐｈａｓｅ ｅｐｉｔａｘｉａｌ ｇｒｏｗｔｈ ａｎｄ ｐｈｏｔｏｌｕｍｉｎｅｓｃｅｎｔｐｒｏｐｅｒｔｉｅｓ ｏｆ Ｚｎ１ＡｘＭｇｘＯ？０ＩｘＩ０．４９？ ｔｈｉ' ＡＰＰＬＩＥＤ ＰＨＹＳＩＣＳ ＬＥＴＴＥＲＳ ＶＯＬＵＭＥ ７９， ＮＵＭＢＥＲ １３, 20010924, ｐ．２０２２-２０２４
JPN6015029949; Ｍａｔｓｕｂａｒａ 他: '"Ｂａｎｄ-ｇａｐ ｍｏｄｉｆｉｅｄ Ａｌ-ｄｏｐｅｄ Ｚｎ１-ｘＭｇｘＯ ｔｒａｎｓｐａｒｅｎｔ ｃｏｎｄｕｃｔｉｎｇ ｆｉｌｍｓｄｅｐｏｓｉｔｅｄ ｂｙ ｐｕｌｓｅｄ ｌａｓｅｒ ｄｅｐｏｓｉｔｉ' ＡＰＰＬＩＥＤ ＰＨＹＳＩＣＳ ＬＥＴＴＥＲＳ ＶＯＬＵＭＥ ８５， ＮＵＭＢＥＲ ８, 20040823, ｐ．１３７４-１３７６
JPN6011026780; 松原 浩司 Ｋ． Ｍａｔｓｕｂａｒａ: 'パルスレーザ堆積法によるワイドギャップＡｌドープＺｎＭｇＯ薄膜の作製 Ｗｉｄｅ ｂａｎｄｇａｐ Ａｌ-ｄｏｐｅｄ ＺｎＭｇＯ ｆｉ' ２００３年（平成１５年）春季 第５０回応用物理学関係連合講演会講演予稿集 第２分冊 Ｅｘｔｅｎｄｅｄ Ａｂｓｔｒａｃ 第２巻, 200303, ｐ．６６５, （社）応用物理学会
JPN6015029929; Ｓｈａｒｍ 他: '"Ｏｐｔｉｃａｌ ａｎｓ ｓｔｒｕｃｔｕａｌ ｐｒｏｐｅｒｔｉｅｓ ｏｆ ｅｐｉｔａｘｉａｌ ＭｇｘＺｎ１-ｘＯ ａｌｌｏｙｓ"' Ａｐｐｉｅｄ Ｐｈｙｓｉｃ Ｌｅｔｔｅｒｓ Ｖｏｌ．７５， Ｎｏ．２１, 19991122, ｐ．３３２７-３３２９
JPN6015029933; Ｍｉｎｅｍｏｔｏ 他: '"Ｐｒｅｐａｒａｔｉｏｎ ｏｆ Ｚｎ１-ｘ ＭｇｘＯ ｆｉｌｍｓ ｂｙ ｒａｄｉｏ ｆｒｅｑｕｅｎｃｙ ｍａｇｎｅｔｒｏｎ ｓｐｕｔｔｅｒｉｎｇ"' Ｔｈｉｎ Ｓｏｌｉｄ Ｆｉｌｍｓ ｖｏｌ．３７２, 2000, ｐ．１７３-１７６
JPN6015029936; Ｓｏｎａｗａｎｅ 他: '"Ｓｔｒｕｃｔｕｒａｌ， ｏｐｔｉｃａｌ ａｎｄ ｅｌｅｃｔｒｉｃａｌ ｐｒｏｐｅｒｔｉｅｓ ｏｆ ｐｏｓｔ ａｎｎｅａｌｅｄ Ｍｇ ｄｏｐｅｄ ＺｎＯ ｆｉｌｍｓ ｆｏｒｏｐｔｏｅｌｅｃｔｒｏｎｉｃ' Ｏｐｔｉｃａｌ ａｎｄ Ｑｕａｎｔｕｍ Ｅｌｅｃｔｒｏｎｉｃｓ Ｖｏｌｕｍｅ４１， Ｉｓｓｕｅ１, 20090716, ｐ．１７-２６
JPN6015029939; Ｔａｋｅｕｃｈｉ 他: '"Ｍｏｎｏｌｉｔｈｉｃ ｍｕｌｔｉｃｈａｎｎｅｌ ｕｌｔｒａｖｉｏｌｅｔ ｄｅｔｅｃｔｏｒ ａｒｒａｙｓ ａｎｄ ｃｏｎｔｉｎｕｏｕｓ ｐｈａｓｅｅｖｏｌｕｔｉｏｎ ｉｎ ＭｇｘＺｎ１-ｘＯ ｃｏｍｐ' ＪＯＵＲＮＡＬ ＯＦ ＡＰＰＬＩＥＤ ＰＨＹＳＩＣＳ ＶＯＬＵＭＥ ９４， ＮＵＭＢＥＲ １１, 20031201, ｐ．７３３６-７３４０
JPN6015029945; Ｐａｒｋ 他: '"Ｍｅｔａｌｏｒｇａｎｉｃ ｖａｐｏｒ-ｐｈａｓｅ ｅｐｉｔａｘｉａｌ ｇｒｏｗｔｈ ａｎｄ ｐｈｏｔｏｌｕｍｉｎｅｓｃｅｎｔｐｒｏｐｅｒｔｉｅｓ ｏｆ Ｚｎ１ＡｘＭｇｘＯ？０ＩｘＩ０．４９？ ｔｈｉ' ＡＰＰＬＩＥＤ ＰＨＹＳＩＣＳ ＬＥＴＴＥＲＳ ＶＯＬＵＭＥ ７９， ＮＵＭＢＥＲ １３, 20010924, ｐ．２０２２-２０２４
JPN6015029949; Ｍａｔｓｕｂａｒａ 他: '"Ｂａｎｄ-ｇａｐ ｍｏｄｉｆｉｅｄ Ａｌ-ｄｏｐｅｄ Ｚｎ１-ｘＭｇｘＯ ｔｒａｎｓｐａｒｅｎｔ ｃｏｎｄｕｃｔｉｎｇ ｆｉｌｍｓｄｅｐｏｓｉｔｅｄ ｂｙ ｐｕｌｓｅｄ ｌａｓｅｒ ｄｅｐｏｓｉｔｉ' ＡＰＰＬＩＥＤ ＰＨＹＳＩＣＳ ＬＥＴＴＥＲＳ ＶＯＬＵＭＥ ８５， ＮＵＭＢＥＲ ８, 20040823, ｐ．１３７４-１３７６
JPN6011026780; 松原 浩司 Ｋ． Ｍａｔｓｕｂａｒａ: 'パルスレーザ堆積法によるワイドギャップＡｌドープＺｎＭｇＯ薄膜の作製 Ｗｉｄｅ ｂａｎｄｇａｐ Ａｌ-ｄｏｐｅｄ ＺｎＭｇＯ ｆｉ' ２００３年（平成１５年）春季 第５０回応用物理学関係連合講演会講演予稿集 第２分冊 Ｅｘｔｅｎｄｅｄ Ａｂｓｔｒａｃ 第２巻, 200303, ｐ．６６５, （社）応用物理学会
JPN6015029929; Ｓｈａｒｍ 他: '"Ｏｐｔｉｃａｌ ａｎｓ ｓｔｒｕｃｔｕａｌ ｐｒｏｐｅｒｔｉｅｓ ｏｆ ｅｐｉｔａｘｉａｌ ＭｇｘＺｎ１-ｘＯ ａｌｌｏｙｓ"' Ａｐｐｉｅｄ Ｐｈｙｓｉｃ Ｌｅｔｔｅｒｓ Ｖｏｌ．７５， Ｎｏ．２１, 19991122, ｐ．３３２７-３３２９
JPN6015029933; Ｍｉｎｅｍｏｔｏ 他: '"Ｐｒｅｐａｒａｔｉｏｎ ｏｆ Ｚｎ１-ｘ ＭｇｘＯ ｆｉｌｍｓ ｂｙ ｒａｄｉｏ ｆｒｅｑｕｅｎｃｙ ｍａｇｎｅｔｒｏｎ ｓｐｕｔｔｅｒｉｎｇ"' Ｔｈｉｎ Ｓｏｌｉｄ Ｆｉｌｍｓ ｖｏｌ．３７２, 2000, ｐ．１７３-１７６
JPN6015029936; Ｓｏｎａｗａｎｅ 他: '"Ｓｔｒｕｃｔｕｒａｌ， ｏｐｔｉｃａｌ ａｎｄ ｅｌｅｃｔｒｉｃａｌ ｐｒｏｐｅｒｔｉｅｓ ｏｆ ｐｏｓｔ ａｎｎｅａｌｅｄ Ｍｇ ｄｏｐｅｄ ＺｎＯ ｆｉｌｍｓ ｆｏｒｏｐｔｏｅｌｅｃｔｒｏｎｉｃ' Ｏｐｔｉｃａｌ ａｎｄ Ｑｕａｎｔｕｍ Ｅｌｅｃｔｒｏｎｉｃｓ Ｖｏｌｕｍｅ４１， Ｉｓｓｕｅ１, 20090716, ｐ．１７-２６
JPN6015029939; Ｔａｋｅｕｃｈｉ 他: '"Ｍｏｎｏｌｉｔｈｉｃ ｍｕｌｔｉｃｈａｎｎｅｌ ｕｌｔｒａｖｉｏｌｅｔ ｄｅｔｅｃｔｏｒ ａｒｒａｙｓ ａｎｄ ｃｏｎｔｉｎｕｏｕｓ ｐｈａｓｅｅｖｏｌｕｔｉｏｎ ｉｎ ＭｇｘＺｎ１-ｘＯ ｃｏｍｐ' ＪＯＵＲＮＡＬ ＯＦ ＡＰＰＬＩＥＤ ＰＨＹＳＩＣＳ ＶＯＬＵＭＥ ９４， ＮＵＭＢＥＲ １１, 20031201, ｐ．７３３６-７３４０
Attorney, Agent or Firm:
Fukami patent office