Title:
MANUFACTURE OF LIGHT EMITTING ELEMENT
Document Type and Number:
Japanese Patent JPH02224377
Kind Code:
A
Abstract:
PURPOSE:To improve a light emitting layer in a light emitting property and to give full scope to its property by a method wherein an amorphous carbon film obtained through a sputtering method is used as a light emitting layer and an amorphous silicon carbide formed through a plasma CVD method is used as an injection layer of holes and electrons. CONSTITUTION:An a-C:H film or an a-CsCi:H film obtained through a sputtering method is used as a light emitting layer. Therefore, the light emitting property of the light emitting layer can be controlled by changing a sputtering condition, so that the light emitting layer, which meets requirements and has a large optical energy gap, can be easily obtained. An a-SiC film formed through a plasma CVD method is utilized as an injection layer of holes and ions, so that the injection layer having the target characteristics concerning an optical energy gas and resistivity can be easily formed, and electrons and holes are injected well into the injection layer even if the light emitting layer and the injection layer are joined together through a hetero-junction. By this setup, a-C:H film or a light emitting layer is able to fully display its property.
Inventors:
WATANABE MISUZU
Application Number:
JP4577589A
Publication Date:
September 06, 1990
Filing Date:
February 27, 1989
Export Citation:
Assignee:
MEIDENSHA ELECTRIC MFG CO LTD
International Classes:
H01L21/205; H01L33/18; H01L33/34; H01L33/42; (IPC1-7): H01L21/205; H01L33/00
Attorney, Agent or Firm:
Fujiya Shiga (2 outside)