Title:
不揮発記憶装置
Document Type and Number:
Japanese Patent JP5709329
Kind Code:
B2
Abstract:
The present invention provides a magnetic memory element having a memory cell of size 4F 2 which realizes crosspoint-type memory. In a magnetic memory element 100, a first magnetic layer 22, a third magnetic layer (spin polarization enhancement layer) 27, an intermediate layer 21, a fourth magnetic layer (spin polarization enhancement layer) 26, and a second magnetic layer 20 are stacked in order. The intermediate layer 21 is made of an insulating material or a nonmagnetic material. The second magnetic layer 20 comprises a ternary alloy of gadolinium, iron and cobalt, a binary alloy of gadolinium and cobalt, or a binary alloy of terbium and cobalt. Alternatively, the first magnetic layer 22 comprises a ternary alloy of terbium, iron and cobalt, or a binary alloy of terbium and cobalt.
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Inventors:
Yamada Michiya
Yasushi Ogimoto
Yasushi Ogimoto
Application Number:
JP2013112009A
Publication Date:
April 30, 2015
Filing Date:
May 28, 2013
Export Citation:
Assignee:
Fuji Electric Co., Ltd.
International Classes:
H01L21/8246; G11C11/15; H01F10/16; H01F10/32; H01L27/105; H01L29/82; H01L43/08; H01L43/10
Domestic Patent References:
| JP2008047257A | ||||
| JP2005183826A | ||||
| JP8274386A | ||||
| JP2002208681A | ||||
| JP2002208680A | ||||
| JP2007525840A | ||||
| JP2007142364A | ||||
| JP2006269866A | ||||
| JP2005503669A |
Attorney, Agent or Firm:
Shoichi Okuyama
Arihara Koichi
Matsushima Tetsuo
Arihara Koichi
Matsushima Tetsuo