PURPOSE: To actuate with a 5V-single power source by making a writing high voltage and a ground potential in accordance with data to be written to a selected bit line and holding a non-selective word line and a bit line at a pre- charged potential.
CONSTITUTION: At the time of a data writing cycle, first, after the word line and the bit line potential are pre-charged to a re-charged voltage which is a writing preventing voltage, any one out of the writing high voltages the pre- charged voltage and the ground voltage, in accordance with data to be written, the selective word line and the selective bit line potential are set to and other non-selective word line and bit line hold a pre-charged voltage condition in an electrically floating condition. Both of a data erasing (writing '1') and a programming (writing '0') are executed by utilizing a tunnel current through the tunnel insulating film of the transistor of a memory cell. Accordingly, a writing high voltage generation is executed by using the internal pressure rising circuit of an on-chip and the 5V-single action can be executed.
| JPH1074916 | SEMICONDUCTOR STORAGE DEVICE |
| JPS62204498 | MULTIVALUED MEMORY |
NAKAYAMA TAKESHI
KOBAYASHI KAZUO
| JPS58115691A | 1983-07-09 |