NONVOLATILE SEMICONDUCTOR STORAGE DEVICE

Title:

NONVOLATILE SEMICONDUCTOR STORAGE DEVICE

Document Type and Number:

Japanese Patent JP2005251859

Kind Code:

A

Abstract:

To provide a nonvolatile semiconductor storage device in which memory cells are highly integrated by suppressing the occurrence of the dislocations of the memory cells when the cells are highly integrated, and which is high in yield.

After field shield transistors are formed in a selective transistor region having a narrow element separating width, element separation is performed on local bit lines by impressing 0 V upon the gates 223 of the field shield transistors. In addition, since the gate 223 of each field shield transistor is bundled with a gate member, the layout area can be reduced as compared with the case where a contact hole is arranged directly in the gate 223 of each field shield transistor.

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Inventors:

ARIKANE TAKESHI
KOBAYASHI TAKASHI
SASAKO YOSHITAKA

Application Number:

JP2004057662A

Publication Date:

September 15, 2005

Filing Date:

March 02, 2004

Export Citation:

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Assignee:

RENESAS TECH CORP

International Classes:

H01L21/8247; B41J29/38; G11C7/02; H01L27/115; H01L29/788; H01L29/792; (IPC1-7): H01L21/8247; H01L27/115; H01L29/788; H01L29/792

Attorney, Agent or Firm:

Yamato Tsutsui

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