Title:
OPTICAL SEMICONDUCTOR ELEMENT AND SEMICONDUCTOR MONOLITHIC OPTICAL CIRCUIT
Document Type and Number:
Japanese Patent JP2017201648
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide an optical semiconductor element which has excellent heat radiation effect and hardly causes characteristics deterioration or thermal interference.SOLUTION: An optical semiconductor element comprises: a lower clad layer 10; a core layer 11 formed on the lower clad layer 10; a semiconductor mesa structure 12 formed on the core layer 11; support structures 13a, 13b formed around the semiconductor mesa structure 12 on the core layer 11; thermal interference suppressing groove structures 14a, 14b formed to separate the semiconductor mesa structure 12 and the support structures 13a, 13b; an organic material 16 formed to fill one thermal interference suppressing groove structure 14b; a p-electrode 17 formed to be in contact with an upper part of the semiconductor mesa structure 12; and an n-electrode 18 formed to be in contact with the core layer 11 exposed to a bottom part of the thermal interference suppressing groove structure 14a.SELECTED DRAWING: Figure 1
Inventors:
SATO TOSHIYA
Application Number:
JP2016092343A
Publication Date:
November 09, 2017
Filing Date:
May 02, 2016
Export Citation:
Assignee:
NIPPON TELEGRAPH & TELEPHONE
International Classes:
H01S5/50; G02B6/12; G02F1/025; H01S5/026; H01S5/22
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Foreign References:
| US20130243020A1 | 2013-09-19 |
Other References:
FISCHER ET AL.: "“All-Optical Regenerative OTDM Add-Drop Multiplexing at 40 Gb/s Using Monolithic InP Mach-Zehnder I", IEEE PHOTONICS TECHNOLOGY LETTERS, vol. 12, no. 3, JPN6019008413, March 2000 (2000-03-01), pages 335 - 337, XP000931981, ISSN: 0004144985, DOI: 10.1109/68.826932
Attorney, Agent or Firm:
Shigeki Yamakawa
Yuzo Koike
Masaki Yamakawa
Yuzo Koike
Masaki Yamakawa
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