Title:
METHOD FOR REFINING HIGH-PURITY TITANIUM
Document Type and Number:
Japanese Patent JP3177816
Kind Code:
B2
Abstract:
PURPOSE: To surely prevent the breaking and falling of a deposition substrate irrespective of the weight of deposit at the time of refining high-purity titanium by the iodine process by heating the juncture between the substrate and the supporting member to a deposition temp.
CONSTITUTION: A deposition substrate 2 consisting of a U-shaped high-purity titanium tube is welded to a supporting member 6, an electric heater 8 is inserted therebetween, the assembly is set in a reaction vessel 1, and crude titanium 3 is set. The vessel 1 is evacuated to a specified vacuum and heated to 70-900°C by a heating furnace 4, the inside of the substrate 2 is also evacuated, and the vicinity 7 of a juncture with the substrate 2 is heated to the deposition temp. The vapor of TiI4 is supplied into the vessel 1 and allowed to react with the crude titanium 3 to form TiI2, and the TiI2 is thermally decomposed on the surface of the substrate 2 to deposit high-purity titanium 9. At this time, since the vicinity 7 of the juncture is heated to a temp. necessary to deposition, the high-purity titanium 9 of the same thickness is deposited and reinforced, and the breaking and falling of the substrate 2 are prevented irrespective of the weight of the deposit.
Inventors:
Yasunori Yoshimura
Application Number:
JP7810895A
Publication Date:
June 18, 2001
Filing Date:
March 08, 1995
Export Citation:
Assignee:
Sumitomo Citix Amagasaki
International Classes:
C22B34/12; (IPC1-7): C22B34/12
Domestic Patent References:
| JP4246136A | ||||
| JP3115580A | ||||
| JP273925A | ||||
| JP6247479A |
Attorney, Agent or Firm:
Raw form Motoshige (1 person outside)
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