Title:
OPTOELECTRIC TRANSDUCER
Document Type and Number:
Japanese Patent JP2007207957
Kind Code:
A
Abstract:
To provide an optoelectric transducer improving a reliability.
An i-type amorphous silicon layer 2 and a p-type amorphous silicon layer 3 are formed on the light-receiving surface of an n-type single-crystal silicon board 1, and a transparent conductive film 4 is formed on the p-type amorphous silicon layer 3, thus constituting a photoelectric converter 101. A collecting electrode 5 having a plurality of holes 8 in a surface is formed on the photoelectric converter 101, and a protective layer 7 is formed coating the collecting electrode 5. The protective layer 7 is formed so as to coat the surfaces of a plurality of the holes 8 in the surface of the collecting electrode 5.
COPYRIGHT: (C)2007,JPO&INPIT
Inventors:
NAKAJIMA TAKESHI
MARUYAMA EIJI
MARUYAMA EIJI
Application Number:
JP2006023967A
Publication Date:
August 16, 2007
Filing Date:
January 31, 2006
Export Citation:
Assignee:
SANYO ELECTRIC CO
International Classes:
H01L31/04
Domestic Patent References:
| JPH05102511A | 1993-04-23 |
Attorney, Agent or Firm:
Hiroshi Kakutani