Title:
有機薄膜トランジスタ素子、有機半導体膜形成用組成物、有機半導体膜の製造方法及び有機半導体膜
Document Type and Number:
Japanese Patent JP6666996
Kind Code:
B2
Abstract:
Provided are: an organic thin film transistor element including an organic semiconductor layer that includes an organic semiconductor compound, in which a content of one kind or two or more kinds of atoms selected from the group consisting of Li, Na, P, K, Fe, Pd, Sn, B, Cl, Br, and I in the organic semiconductor layer is 300 to 700 ppm; an organic semiconductor film-forming composition used for forming the organic semiconductor layer of the element; a method of forming an organic semiconductor film using the composition; and an organic semiconductor film formed of the composition.
Inventors:
Fumiko Tamakuni
Application Number:
JP2018510570A
Publication Date:
March 18, 2020
Filing Date:
March 30, 2017
Export Citation:
Assignee:
FUJIFILM Corporation
International Classes:
H01L51/30; C08G61/12; H01L29/786; H01L51/05
Domestic Patent References:
JP2012224618A | ||||
JP2007287961A | ||||
JP2012167242A |
Foreign References:
US20150218304 | ||||
WO2012102390A1 | ||||
WO2015133402A1 |
Attorney, Agent or Firm:
Patent corporation Iida and Partners
Toshizo Iida
Shuichi Akabane
Toshizo Iida
Shuichi Akabane