Title:
OXIDE SUBSTRATE FOR PRODUCING EPITAXIAL FILM, METHOD OF PRODUCING EPITAXIAL FILM AND PIEZOELECTRIC DEVICE
Document Type and Number:
Japanese Patent JP2001122699
Kind Code:
A
Abstract:
To provide an oxide substrate useful for producing an epitaxial film by which an eqitaxial film having quality nearly equal to that of the conventional epitaxial film can be obtained at low cost, and to provided a method of producing the epitaxial film.
The surface of the oxide substrate useful for producing an epitaxial film is a non-mirror surface having an arithmetic mean roughness (Ra), prescribed by JISB0601-1994, of >0.02 μm. The method of producing the epitaxial film is comprised of epitaxially growing a film on an oxide substrate having such a nonmirror surface.
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Inventors:
SHIMOKATA MIKIO
Application Number:
JP29981999A
Publication Date:
May 08, 2001
Filing Date:
October 21, 1999
Export Citation:
Assignee:
MURATA MANUFACTURING CO
International Classes:
C30B29/30; C30B19/00; (IPC1-7): C30B29/30; C30B19/00
Attorney, Agent or Firm:
Okada