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Title:
PARTS HAVING SILICON-CONTAINING SUBSTRATE
Document Type and Number:
Japanese Patent JP2003192470
Kind Code:
A
Abstract:

To provide parts comprising a silicon-containing substrate having a barrier layer to prevent formation of gaseous species of Si when exposed to a high temperature aqueous environment.

The barrier layer for the silicon-containing substrate to prevent formation of gaseous species of silicon when exposed to a high temperature aqueous environment comprises aluminosilicate of group IIA and/or group IIIB such as barium - strontium aluminosilicate and an oxide of group VB.


Inventors:
HOLOWCZAK JOHN E
EATON HARRY E
Application Number:
JP2002368880A
Publication Date:
July 09, 2003
Filing Date:
December 19, 2002
Export Citation:
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Assignee:
UNITED TECHNOLOGIES CORP
International Classes:
C04B41/85; B32B18/00; C04B41/50; C04B41/52; C04B41/87; C04B41/89; C23C4/10; C23C26/00; C23C28/00; C23C28/04; C23C30/00; F01D5/28; (IPC1-7): C04B41/85; C04B41/89; C23C26/00; C23C28/04
Attorney, Agent or Firm:
Suzuki Masayoshi