Title:
パターン形成方法
Document Type and Number:
Japanese Patent JP4826841
Kind Code:
B2
Abstract:
A pattern is formed by coating a chemically amplified positive resist composition comprising a resin comprising acid labile group-containing recurring units and a photoacid generator onto a substrate, drying to form a resist film, exposing the resist film to high-energy radiation through a phase shift mask having a lattice-like array of shifters, PEB, developing to form a positive pattern, illuminating or heating the positive pattern to eliminate acid labile groups for increasing alkaline solubility and to induce crosslinking for imparting solvent resistance, coating a reversal film, and dissolving away the positive pattern in an alkaline wet etchant to form a pattern by way of positive/negative reversal.
Inventors:
Jun Hatakeyama
Takao Yoshihara
Kazuhiro Katayama
Takao Yoshihara
Kazuhiro Katayama
Application Number:
JP2009006574A
Publication Date:
November 30, 2011
Filing Date:
January 15, 2009
Export Citation:
Assignee:
Shin-Etsu Chemical Co., Ltd.
International Classes:
G03F7/40; G03F1/32; G03F1/54; G03F1/70; G03F7/004; G03F7/039; G03F7/11; G03F7/38; H01L21/027
Domestic Patent References:
| JP11003847A | ||||
| JP2003316019A | ||||
| JP2001356481A | ||||
| JP2001092154A |
Foreign References:
| WO2007142209A1 |
Attorney, Agent or Firm:
Takashi Kojima
Saori Shigematsu
Katsunari Kobayashi
Takeshi Ishikawa
Saori Shigematsu
Katsunari Kobayashi
Takeshi Ishikawa