To perform accurate pattern overlapping by a method wherein a difference between overlapping measuring data at points as reference image heights and points excluding the points as the reference image heights in a predetermined region is acquired, the points exceeding the threshold are eliminated, and a replacement is made to values to which linear components are annexed.

A resist coating is performed with a coat unit on a semiconductor wafer surface as a processing body (S1). Next, the semiconductor wafer is carried into an algner, and measuring is made on overlapping between patterns formed therein as an underlayer in the semiconductor wafer and patterns to be patterned from now on (S2). When this overlapping is measured, overlapping correction data are calculated (S3). Thus, values seemed as abnormal values are removed to enhance measuring precision. Next, an exposing processing is made for such the overlapped semiconductor wafers (S4). Continuously, a developing processing is made for the exposed semiconductor wafers (S5), and further the overlapping measure is made (S6). Here also, abnormal values are removed to enhance measuring precision.