To provide a pattern size measuring method for a photomask in which mask transfer characteristics are accurately predicted and OPC is accurately adjusted by correcting a hole pattern measured value of the mask by an SEM into a value matching actual mask pattern transfer and which has practically high reliability, and the photomask.
The pattern size measuring method for the photomask includes a step of measuring diffracted light intensity at each hole pattern size of the mask, a step of obtaining a length measured value by measuring the pattern by the SEM and estimating corner rounding, a step of performing electromagnetic field analytic simulation to obtain a simulation value of the diffracted light intensity, a step of determining as a correction value an offset amount between a pattern size value calculated through the diffracted light intensity measurement and simulation and the SEM length measured value, and determining as a correction value an offset amount from estimation of the corner rounding, and a step of applying the correction values to other pattern side values measured by the SEM.
INAZUKI YUICHI
SUDO TAKANORI
MORIKAWA YASUTAKA
Keiko Fukamachi
Hideo Ito
Hiromi Fujimasu
Naoki Goto