Title:
PHOTODETECTION ELEMENT, IMAGE SENSOR, AND SEMICONDUCTOR FILM
Document Type and Number:
Japanese Patent JP2023145474
Kind Code:
A
Abstract:
To provide a photodetection element, an image sensor, and a semiconductor film that have high external quantum efficiency and excellent durability against repeated driving.SOLUTION: A photodetection element having a photoelectric conversion layer containing an aggregate of PbS quantum dots and a ligand that coordinates to the PbS quantum dots, and the PbS quantum dots contain 1.75 mol or more and 1.95 mol or less of Pb atoms per 1 mol of S atom, and the ligand includes a ligand containing a halogen atom, and polydentate ligands containing two or more coordination moieties, and the polydentate ligand containing two or more coordination moieties is a ligand represented by any one of formulas (A) to (C).SELECTED DRAWING: Figure 1
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Inventors:
TAKADA MASAHIRO
ONO MASASHI
KITAJIMA SHUNSUKE
ONO MASASHI
KITAJIMA SHUNSUKE
Application Number:
JP2023111270A
Publication Date:
October 11, 2023
Filing Date:
July 06, 2023
Export Citation:
Assignee:
FUJIFILM CORP
International Classes:
H01L31/10; B82Y20/00; C01G21/21; H01L27/146; H01L29/06; H01L31/08
Attorney, Agent or Firm:
Sykes Patent Attorney Corporation
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