Title:
PHOTODETECTOR ARRAY
Document Type and Number:
Japanese Patent JP3470790
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a photodetector array, in which the pitches of photodetectors can be microstructured up to limit of lithography and which uses a-Si.
SOLUTION: In a photodetector constituted by through successively forming a lower electrode 3 by a transparent conductive film, an amorphous silicon layer 4 as a photoelectric conversion layer and an upper electrode 5 consisting of Ni, etc., onto a transparent substrate 1, the pitches of the photodetector array can be microstructured up to the limit of a lithography because a fine pattern having high accuracy can be formed by forming a pattern 2 requiring fine working onto the plane of light incidence of the planar substrate 1.
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Inventors:
Yuko Kiriyama
Application Number:
JP34424197A
Publication Date:
November 25, 2003
Filing Date:
November 28, 1997
Export Citation:
Assignee:
Mitutoyo Corporation
International Classes:
G01D5/347; G01D5/34; H01L27/14; H01L27/146; (IPC1-7): H01L27/146; G01D5/34; H01L27/14
Domestic Patent References:
| JP561318A | ||||
| JP61104561U |