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Title:
PHOTODETECTOR, AND SEMICONDUCTOR EXPOSURE DEVICE
Document Type and Number:
Japanese Patent JP2005345102
Kind Code:
A
Abstract:

To provide a highly sensitive photodetector hardly affected by the fluctuation of an optical axis, and capable of detecting light while holding a uniform light quantity distribution, and to provide a semiconductor exposure device using the photodetector.

A photodetector 10 is arranged on the optical axis of detected light DL. An optical path of the detected light DL is made therein not to be disturbed by a support frame 23 so as to make the whole detected light DL get incident into a self-standing conductive thin film 21. When the detected light DL of a short-wavelength light gets incident into the thin film 21, one part of light energy of the short-wavelength light is used for releasing photoelectrons, and a photocurrent equivalent to released charges flows between a detector main body 20 and a grounding. A light quantity attenuated in the thin film 21 and further a transmission light quantity are able to be measured by measuring the photocurrent by an ammeter 30.


Inventors:
HAMAMURA HIROSHI
FUKUI KAZUTOSHI
Application Number:
JP2002128259A
Publication Date:
December 15, 2005
Filing Date:
April 30, 2002
Export Citation:
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Assignee:
NIKON CORP
International Classes:
G01J1/02; G01J1/42; G01T1/24; G01T1/29; G03F7/20; H01L21/027; H01L31/09; (IPC1-7): G01T1/29; G01J1/02; G01T1/24; H01L21/027; H01L31/09
Attorney, Agent or Firm:
Mitsuhiro Fukuda