Title:
PHOTOELECTRIC CONVERSION APPARATUS
Document Type and Number:
Japanese Patent JP2010251424
Kind Code:
A
Abstract:
To provide a photoelectric conversion apparatus in which an i-layer includes a photoelectric conversion layer comprising crystalline silicon germanium, representing a high power generation characteristic in a long wavelength band.
The photoelectric conversion apparatus 100 includes a photoelectric conversion layer 3 in which a p-layer 41, a crystalline silicon germanium i layer 42, and an n-layer 43 are stacked, sequentially from light incident side, on a substrate 1. In the photoelectric conversion apparatus 100, the concentration of germanium in the crystalline silicon germanium i layer 42 changes in such manner as decreases stepwise when advances from the p-layer 41 side to the n-layer 43 side.
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Inventors:
ASAKUSA KOICHI
TAKEUCHI YOSHIAKI
KUREYA MASAYUKI
MATSUI TAKUYA
KONDO MICHIO
TAKEUCHI YOSHIAKI
KUREYA MASAYUKI
MATSUI TAKUYA
KONDO MICHIO
Application Number:
JP2009097263A
Publication Date:
November 04, 2010
Filing Date:
April 13, 2009
Export Citation:
Assignee:
MITSUBISHI HEAVY IND LTD
NAT INST OF ADVANCED IND SCIEN
NAT INST OF ADVANCED IND SCIEN
International Classes:
H01L31/04
Domestic Patent References:
JPH11233803A | 1999-08-27 | |||
JPH05234918A | 1993-09-10 |
Attorney, Agent or Firm:
Noriharu Fujita
Kunio Ueda
Kunio Ueda
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